STIR: Novel Electronic States by Gating Strongly Correlated Materials
Abstract
Electrostatically modulating the carrier density of semiconductors, where the physics is relatively simple and well-understood, has long been the foundation for electronic devices. What if we could apply these techniques to a much broader range of materials? This short grant aimed at demonstrating such large potential modulations in correlated electron materials using a technique known as electrolyte gating. This planbuilt on my groups recent demonstration of electrolyte gating in Strontium Titanate, using an atomically thin hexagonal Boron Nitride barrier to prevent disorder and chemical modification of the surface of the Strontium Titanate during the electrolyte gating. During the course of this grant, we refined our exfoliation techniques and learned to apply thin hexagonal Boron Nitride to single crystals of materials expected to show some of the most exciting correlated electron behavior which could be modulated by gating: spin liquids (e.g. a layered Sodium Iridate compound) and multiferroics (e.g. Bismuth Ferrite). We did not complete the process of electrolyte gating such materials, but did make important progress on it.
Document Details
- Document Type
- Technical Report
- Publication Date
- Mar 01, 2016
- Accession Number
- AD1010367
Entities
People
- David Goldhaber-Gordon
Organizations
- Stanford University