Electronics: Mott Transistor: Fundamental Studies and Device Operation Mechanisms
Abstract
The overarching goals of the research project include advancing our understanding of strong correlation effects in Mott semiconductors and their response to electric fields. This is relevant to their eventual use as advanced semiconductors in microwave devices or high speed transistors where collective effects are exploited to design switches. The report presents our progress in studying electron transport mechanisms in doped SmNiO3. Upon electron doping via hydrogenation, a strongly correlated Mott insulating state is formed in the nickelate. It is therefore important to understand the carrier transport mechanism in the doped nickelate where carriers are strongly localized. We present a detailed study of carrier transport as a function of temperature along with description of the mechanisms in a strongly localized picture characteristic of Mott insulators.
Document Details
- Document Type
- Technical Report
- Publication Date
- Mar 21, 2016
- Accession Number
- AD1010381
Entities
People
- Shriram Ramanathan
Organizations
- Harvard University