Analysis of Electrical Transport and Noise Mechanisms in Amorphous Silicon

Abstract

The objective of this program is to investigate the mechanisms of electrical conduction in amorphous silicon and identify factors affecting the performance of uncooled imaging focal plane array systems based on amorphous silicon microbolometer thermal detector structures. Measurements of the temperature dependence of conductivity and noise show that the dominant conduction mechanism in p-type a-Si:H is that of Mott variable range hopping. The hopping parameters are controlled by the film deposition conditions such as hydrogen dilution of the silane precursor and boron dopant level. The low frequency noise has a weak temperature dependence and is dominated by a 1/f component which follows the Hooge model and is correlated to the conductivity hopping parameters and in turn to the temperature coefficient of resistance (TCR).

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Document Details

Document Type
Technical Report
Publication Date
Nov 23, 2015
Accession Number
AD1010893

Entities

People

  • A. J. Syllaios
  • Christopher L. Littler
  • Oliver Chyan
  • Usha Philipose
  • Vincent C. Lopes

Organizations

  • University of North Texas

Tags

Communities of Interest

  • Advanced Electronics
  • Energy and Power Technologies

DTIC Thesaurus Topics

  • Charge Carriers
  • Chemical Vapor Deposition
  • Crystal Structure
  • Detectors
  • Electrical Conductivity
  • Electrical Measurement
  • Energy Bands
  • Equations
  • Fermi Levels
  • Materials
  • Materials Processing
  • Materials Science
  • Raman Spectra
  • Semiconductors
  • Spectra
  • Spectroscopy
  • Thin Films

Fields of Study

  • Materials science

Readers

  • Image Processing and Computer Vision.
  • Materials Science and Engineering.
  • Thin Film Deposition Science.