Development of a Silicon Metal-Oxide-Semiconductor-Based Qubit Using Spin Exchange Interactions Alone
Abstract
The objective of this project is to implement an electron spin qubit system on a silicon metal-oxide-semiconductor platform. The logic qubit is formed by three individual spins in electrostatically-defined quantum dots. The gate operations are carried out by spin exchange interactions alone. The project started in November 1, 2010, aims to provide a technological base for a scalable qubit system which is fully compatible with commercial Si CMOS technology. During the funding period, we have successfully developed an array of highly stable Si MOS triple quantum dot devices. We have carried out an ESR spectroscopy to measure the in-homogenous decoherence time of individual electrons and to directly probe the spin-valley mixing in a Si MOS double quantum dot device. We have studied the gate/charge noise of the devices and found to be a bit smaller than similar SiGe QD devices. Preliminary, fast-pulse, experiments are carried out to manipulate and read-out the basis states of the triple quantum dot qubit. Our experimental investigations show encouraging results for the further development of spin-based qubits in Si MOS structures.
Document Details
- Document Type
- Technical Report
- Publication Date
- Mar 31, 2016
- Accession Number
- AD1010909
Entities
People
- Hong W. Jiang
Organizations
- University of California, Los Angeles