Study of Charge Transport in Vertically Aligned Nitride Nanowire Based Core Shell P-I-N Junctions

Abstract

We investigated charge transport in large-area arrays of vertically-aligned, gallium nitride (GaN) based core-shell p-I-n (PIN) diodes. The processed design can potentially produce photodetectors with efficiencies comparable to or better than traditional photomultiplier tubes (PMYs) with significant reduction in Size, Weight, and Power (SWAP). Our approach combines the precision and scability of top-down processing with the enhanced material quality obtained through selective epitaxy to realize these structures. Vertically-aligned, radial core-shell architecture allows for significant defect reduction, strain engineering, polarity controlled growth, and transformative new device designs.

Open PDF

Document Details

Document Type
Technical Report
Publication Date
Jul 01, 2016
Accession Number
AD1011801

Entities

People

  • Abhishek Motayed
  • Albert V Davydov
  • Jongyoon Ha
  • Matthew King
  • Ratan Debnath
  • Sergiy Krylyuk

Organizations

  • University of Maryland, Baltimore

Tags

Communities of Interest

  • Advanced Electronics
  • Counter WMD

DTIC Thesaurus Topics

  • Avalanche Photodiodes
  • Compound Semiconductors
  • Department Of Defense
  • Detection
  • Detectors
  • Diodes
  • Efficiency
  • Epitaxial Growth
  • Fabrication
  • Films
  • Ionizing Radiation
  • Maryland
  • Materials
  • Photodetectors
  • Pin Diodes
  • Thin Films
  • Universities

Fields of Study

  • Materials science

Readers

  • Nanoscale Plasmonic Nanotechnology
  • Semiconductor Device Technology

Technology Areas

  • Microelectronics