Manipulating the Interfacial Electrical and Optical Properties of Dissimilar Materials with Metallic Nanostructures

Abstract

The future of AF sensing is multi-modal imaging sensors that vertically integrate an ever increasing diversity of modes (wavelength bands,polarization states, phase, etc.) onto each pixel. A fundamental challenge is manipulating the electrical and optical properties at the interface ofdissimilar materials. We sought to address the traditional challenges associated with this need via the integration of precisely controlled (semi)metallic nanostructures with III-V semiconductors, using ErAs and related materials as the metals. Our approach began with coupling these metallic nanostructures with growth on patterned templates. We developed a patterning/regrowth process and characterized the deposition of ErAs on a variety of template surfaces using a variety of electrical, optical, structural, and chemically-sensitive techniques. We also examined the optical quality of III-V layers grown above ErAs nanostructures, which is critical for future device applications, and developed a method to achieve optical quality within 80-95% of nominally-identical Er-free structures.

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Document Details

Document Type
Technical Report
Publication Date
Jul 30, 2016
Accession Number
AD1012915

Entities

People

  • Seth R. Bank

Organizations

  • University of Texas at Austin

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Air Force Research Laboratories
  • Chemistry
  • Detectors
  • Electron Microscopy
  • Electronics
  • Materials
  • Materials Science
  • Microscopes
  • Microscopy
  • Molecular Beam Epitaxy
  • Molecular Beams
  • Nanoparticles
  • Nanostructures
  • Optical Properties
  • Quantum Wells
  • Semiconductor Devices
  • Semiconductors

Readers

  • Nanoscale Plasmonic Nanotechnology
  • Quantum Dot Semiconductor Device Photonics and Graphene Optoelectronic Materials and THz Physics.

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene