Electrolyte Gating of Correlated Electron Materials and Nanostructures in Complex Oxides
Abstract
Limits of conventional transistor operation are set by the material parameters of Silicon (Si), the most common semiconductor material used today. Moving to other materials with higher mobility (carbon nanotubes, III-V semiconductors) no longer looks like it will have much impact, as Si mobility has been improved by strain engineering, and devices have gotten so small that mobility is no longer a limiting factor. But can we gain in performance and functionality by making a more dramatic change: using a fundamentally different switching principle? We propose to investigate the basic physics behind the Mott transition with an eye toward creating novel nanoscale and superconducting devices. Specifically, we plan to study materials where interactions and spin physics play a role (notably spin liquids) and materials in which local conduction has recently been achieved or discovered (conducting lines in oxide heterostructures written by conductive AFM (cAFM), and conducting paths at ferroelectric domain walls in oxide heterostructures). In all these cases, we will tune conduction using electrolyte gating.
Document Details
- Document Type
- Technical Report
- Publication Date
- Sep 17, 2015
- Accession Number
- AD1013064
Entities
People
- David Goldhaber-Gordon
Organizations
- Stanford University