Fabrication and Electrical Characterization of Correlated Oxide Field Effect Switching Devices for High Speed Electronics
Abstract
The electronic properties of thin film correlated oxides was investigated via electrical transport measurements and electronic structure studies. Microscopic connection between insulatormetal switching, orbital occupancy, electronphonon interactions was emphasized. The response of correlated oxides to strong electric fields and their dynamics was investigated. A few different oxide systems were considered during the course of the study: they include VO2, SmNiO3, andNbO2. The common aspects of these materials include their thermal insulatormetal transition
Document Details
- Document Type
- Technical Report
- Publication Date
- Nov 19, 2015
- Accession Number
- AD1013073
Entities
People
- Shriram Ramanathan
Organizations
- Harvard University