A 21st Century Approach to Electronic Device Reliability
Abstract
Lifetime prediction for device operation has usually relied on accelerated testing at elevated temperature and then extrapolation back to room temperature operation. This technique frequently fails for scaled, high current density devices found in modern technologies. Device failure is driven by electric field or current mechanisms or low activation energy processes that are masked by other mechanisms at high temperature.Device degradation can be driven by failure in either active structures or passivation layers. We have seen that many issues have an affect on compound semiconductor performance and reliability, including the material quality, strain state, surface cleaning process, and the actual voltage and current conditions during aging. We have conducted comprehensive plan of reliability engineering for III-V device structures. This includes materials and electrical characterization and reliability testing. These techniques were utilized to develop new simulation technologies for device operation and reliability. This allows accurate prediction not only of reliability, but the ability to design structures specifically for improved reliability of operation.
Document Details
- Document Type
- Technical Report
- Publication Date
- Oct 25, 2013
- Accession Number
- AD1013126
Entities
People
- Brent Gila
- Cammy Abernathy
- Fan Ren
- Gijs Bosman
- Kevin R. Jones
- Mark E. Law
- Scott Thompson
- Stephen Pearton
- Toshikazu Nishida