Development of High Quality 4H-SiC Thick Epitaxy for Reliable High Power Electronics Using Halogenated Precursors

Abstract

Research is conducted to investigate the epitaxial growth of thick films using halogenated precursors: chlorine-based dichlorosilane (DCS) and fluorine-based tetrafluorosilane (TFS). TFS (SiF4) has been utilized for the first time to completely eliminate Si droplet formation and suppress parasitic deposition, thus enabling high quality SiC growth. Ni/4H-SiC Schottky diodes fabricated on TFS-grown epilayers show superior performance with high barrier heights and low ideality factors.

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Document Details

Document Type
Technical Report
Publication Date
Aug 02, 2016
Accession Number
AD1014176

Entities

People

  • Tangali S. Sudarshan

Organizations

  • University of South Carolina

Tags

Communities of Interest

  • Advanced Electronics
  • Energy and Power Technologies

DTIC Thesaurus Topics

  • Chemical Vapor Deposition
  • Chemistry
  • Conversion Ratio
  • Crystal Growth
  • Department Of Defense
  • Diodes
  • Electronics
  • Epitaxial Growth
  • Films
  • Materials
  • Metal-Semiconductor Junctions
  • Power Electronics
  • Schottky Diodes
  • Semiconductor Devices
  • Semiconductors
  • Silicon Carbide
  • Silicon Compounds

Fields of Study

  • Materials science

Readers

  • Combustion science or combustion engineering.
  • Organic Chemistry
  • Semiconductor Device Technology

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene