Research Area 4: Electronics: A Special Event at the International Conference on Molecular Beam Epitaxy
Abstract
The International Conference on Molecular Beam Epitaxy (Flagstaff, Arizona, September 7-12, 2014) provided an international forum for the latest research in the area of molecular beam epitaxy (MBE), including the fundamentals of MBE, the latest developments in III-V, II-VI, IV-VI, and IV semiconductors, oxides, nitrides, and wide gap materials, nanowires, quantum dots, spintronics, emerging materials, heterogeneous epitaxy, devices, and production MBE. The conference included 432 attendees from 24 countries and a contributed technical program with 90 oral presentations and 143 poster presentations, with more than 60% of the contributed presentations given by students. The proceedings are published in the internationally renowned Journal of Crystal Growth, volume 425, pages 1-400 (2015). In addition, there were 3 plenary talks, 16 invited presentations, 26 vendor exhibits, and a one day special symposium Meeting with MBE Pioneers(Sunday, September 7, 2014) that vividly delivered the legendary history of some of the most prominent MBE pioneers, capturing their history and personal reflections during the development, evolution, and use of MBE. They shared their valuable experience with the community and most importantly with students and junior researchers.
Document Details
- Document Type
- Technical Report
- Publication Date
- Sep 30, 2015
- Accession Number
- AD1014780
Entities
People
- Yong-hang Zhang
Organizations
- Arizona State University