Nanostructure Fabrication of Zero-Dimensional Quantum Dot Diodes
Abstract
The nanofabrication techniques which are used to create quantum dot diodes will be discussed. The device is a vertical resonant tunneling diode where the lateral dimensions are reduced to approximately 1000 A. Electron beam lithography is used to pattern a small self-aligned metal dot top contact and etch mask.
Document Details
- Document Type
- Technical Report
- Publication Date
- Dec 01, 1988
- Accession Number
- AD1015280
Entities
People
- J. N. Randall
- M. A. Reed
- R. J. Matyi
- T. M. Moore
Organizations
- Texas Instruments