Quantitative Resonant Tunneling Spectroscopy: Current-Voltage Characteristics of Precisely Characterized Resonant Tunneling Diodes

Abstract

A systematic comparison of precisely characterized resonant tunneling structures is presented. A selfconsistent band bending calculation is used to model the experimentally observed resonant peak positions. lt is found that the peak positions can be accurately modeled if the nominal characterization parameters are allowed to vary within the measurement accuracy of the characterization. As a result, it is found that the asymmetries in the currentvoltage characteristics are solely explainable by tunnel barrier thickness fluctuations.

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Document Details

Document Type
Technical Report
Publication Date
Mar 27, 1989
Accession Number
AD1015284

Entities

People

  • A. C. Seabaugh
  • H.-l. Tsai
  • M. A. Reed
  • R. J. Matyi
  • W. M. Duncan
  • W. R. Frensley

Organizations

  • Texas Instruments

Tags

DTIC Thesaurus Topics

  • Accuracy
  • Band Gaps
  • Copyrights
  • Current Density
  • Electrical Measurement
  • Electron Microscopy
  • Energy Bands
  • Fabrication
  • Measurement
  • Photoluminescence
  • Quantum Tunneling
  • Quantum Wells
  • Resonant Tunneling Diodes
  • Thickness
  • Transmission Electron Microscopy
  • Tunnel Diodes
  • Tunneling

Fields of Study

  • Physics

Readers

  • Computational Modeling and Simulation
  • Electrical Engineering
  • Quantum Dot Semiconductor Device Photonics and Graphene Optoelectronic Materials and THz Physics.