Vertical Conduction in the Thin Si/CaF2/Si Structures

Abstract

The silicon-calcium fluoride system has long been considered as a candidate for electrical isolation of silicon, especially in the area of 3D device integration. The relatively small 0.6% lattice mismatch at 300 deg C with Si makes CaF sub 2 a very promising choice. Additionally, CaF sub 2 has the attractive property that it can be patterned directly with electron-beam and ion-beam lithography. However, little attention has been given to the transport properties of the Si-CaF sub 2 heterojunction.

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Document Details

Document Type
Technical Report
Publication Date
Jan 01, 1993
Accession Number
AD1015297

Entities

People

  • Bruce Gnade
  • Chih-chen Cho
  • Jeffrey W. Sleight
  • Mark A. Reed

Organizations

  • Yale University

Tags

DTIC Thesaurus Topics

  • Charged Particles
  • Crystal Lattices
  • Electron Beams
  • Electrons
  • Fluorides
  • Heterojunctions
  • Ion Beams
  • Ions
  • Lithography
  • Microstructure
  • Superlattices
  • Transport Properties
  • Transport Ships

Readers

  • Integrated Circuit Design and Technology.
  • Materials Science and Engineering.
  • Pulsed Power and Plasma Physics.

Technology Areas

  • Directed Energy
  • Directed Energy - Pulsed-Laser Deposition
  • Microelectronics
  • Microelectronics - Graphene