Design and Fabrication of InN Nanowire Photodiode Detectors for SWIR

Abstract

This scientific letter gives the status regarding the project 06cd19 to support CANSOFCOM. Cameras have, at their heart, photo detectors. The latter are made of materials that are sensitive to a specific wavelength band, such as visible, UV, short wave infrared (SWIR), etc. The efficiency of detecting incoming photons and convert them into information to perform imagery is a constant challenge and command to search for new materials to be used as detectors. Among these, InN nanowires were presented by McGill University as promising because InN can respond to a much wider wavelength range than conventional material such as InGaAs. Moreover, InN nanowires are grown directly on Si substrates and can be readily integrated with Si electronics on the same chip, which would reduce the integration cost by a factor of three to five.

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Document Details

Document Type
Technical Report
Publication Date
Dec 13, 2013
Accession Number
AD1016897

Entities

People

  • Philippe Merel
  • Suzanne Paradis

Organizations

  • Defence Research and Development Canada

Tags

DTIC Thesaurus Topics

  • Contracts
  • Detection
  • Detectors
  • Efficiency
  • Electronics
  • Emerging Technology
  • Fabrication
  • Figure Of Merit
  • Films
  • Low Temperature
  • Materials
  • Molecular Beams
  • Nanowires
  • National Security
  • Quantum Efficiency
  • Short-Wavelength Infrared Radiation
  • Thin Films

Fields of Study

  • Physics

Readers

  • Academic Conference Management
  • Computer Science/Computer Engineering/Data Science/Digital Signal Processing.
  • Quantum Dot Semiconductor Device Photonics and Graphene Optoelectronic Materials and THz Physics.

Technology Areas

  • Directed Energy
  • Microelectronics