Erbium Doped GaN Lasers by Optical Pumping
Abstract
This main objective of this project is to construct an optical pump system, which would allow us to carry out optical studies of Er:GaN materials under 980 nm resonant excitation. The results obtained from the optically pumped studies will be utilized to guide crystal growth and laser design. During the supporting period, we have accomplished the following tasks: Successfully completely the installation of a high power 980 laser. The system is dedicated to the studies of the optical and lasing properties of Er:GaN crystals. Successfully attained for the first time freestanding Er:GaN wafers of 2-inches in diameter with a thickness on the millimeter scale. These freestanding wafers were obtained via growth by hydride vapor phase epitaxy (HVPE) in conjunction with a laser-lift-off (LLO) process. An Er doping level of 1.4 10^20 atoms/cm3 has been confirmed by secondary ion mass spectrometry measurement. Carried out optical studies of Er:GaN under 980 nm optical pumping.
Document Details
- Document Type
- Technical Report
- Publication Date
- Jul 13, 2016
- Accession Number
- AD1017406
Entities
People
- Hongxing Jiang
- Jingyu Lin
Organizations
- Texas Tech University