Doped Aluminum Gallium Arsenide (AlGaAs)/Gallium Arsenide (GaAs) Photoconductive Semiconductor Switch (PCSS) Fabrication

Abstract

The fabrication and packaging of doped gallium arsenide (GaAs) photoconductive semiconductor switches with aluminum gallium arsenide (AlGaAs) capping layers are presented. The dopant-diffused contact regions and epitaxial capping layer are fabricated to investigate the advantages of both approaches. Devices were fabricated with various doping region device combinations (intrinsic, p/n, n/n, and p/p) to determine whether there is a device performance or processing freedom advantage to any of these cases.

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Document Details

Document Type
Technical Report
Publication Date
Sep 27, 2016
Accession Number
AD1017480

Entities

People

  • Justin R. Bickford

Organizations

  • United States Army Research Laboratory

Tags

Communities of Interest

  • Advanced Electronics
  • Biomedical

DTIC Thesaurus Topics

  • Aluminum
  • Antireflection Coatings
  • Chemical Vapor Deposition
  • Coatings
  • Diffusion Coefficient
  • Electric Fields
  • Epitaxial Growth
  • Fabrication
  • Gallium
  • Gallium Arsenides
  • High Temperature
  • High Voltage
  • Materials
  • Metals
  • Packaging
  • Semiconductors
  • Three Dimensional

Fields of Study

  • Materials science

Readers

  • Analytical Mechanics
  • Integrated Circuit Design and Technology.
  • Semiconductor Device Technology

Technology Areas

  • Microelectronics
  • Microelectronics - Microelectromechanical Systems