Alternative Solder Bond Packaging Approach for High-Voltage (HV) Pulsed Power Devices

Abstract

The silicon carbide (SiC) super gate-turn-off thyristor (SGTO) device is a superior switching component of interest to the US Army for various pulsed power applications. This research presents a modified power packaging approach for enhancing a pulsed power devices reliability and performance under extreme pulsed switching conditions critical to Army-specific applications. The power package implemented on the SiC SGTO is solder-based, which mitigates the mechanical strain on the die surface metallization. This packaging design eliminates wire bonds on the anode area of the SiC SGTO, which reduces total stray inductance and the total on-resistance of the packaged SiC SGTO device. This report details the optimized pulsed power packaging approach and the pulse evaluation circuit used to evaluate a SiC SGTO device under extreme pulsed current switching conditions.

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Document Details

Document Type
Technical Report
Publication Date
Sep 01, 2016
Accession Number
AD1017567

Entities

People

  • Aderinto Ogunniyi
  • Gail Koebke
  • Heather O'Brien
  • Oladimeji Ibitayo

Organizations

  • United States Army Research Laboratory

Tags

Communities of Interest

  • Energy and Power Technologies

DTIC Thesaurus Topics

  • Carbides
  • Ceramic Materials
  • Compound Semiconductors
  • Heat Transfer
  • High Voltage
  • Materials
  • Military Research
  • Packaging
  • Power
  • Pulsed Power
  • Reliability
  • Resistance
  • Semiconductors
  • Silicon
  • Silicon Carbide
  • Test And Evaluation
  • Thyristors

Readers

  • Electrical Engineering
  • Integrated Circuit Design and Technology.