Molecular Beam Epitaxy Growth and Characterization of Thin Layers of Semiconductor Tin

Abstract

Thin layers of single-crystal, epitaxial semiconductor tin (alpha-Sn) were grown by molecular beam epitaxy (MBE) on cadmium telluride (CdTe) substrates. X-ray diffraction and Raman scattering measurements confirm that the thin layers of alpha-Sn are slightly strained, which supports theoretical prediction that alpha-Sn is a 3-D topological insulator (TI). Future studies will aim at the growth of alpha-Sn with improved transport characteristics using high-quality CdTe buffer layers, studies of the 3-D TI characteristics of alpha-Sn, and the MBE growth of stanene.

Open PDF

Document Details

Document Type
Technical Report
Publication Date
Sep 01, 2016
Accession Number
AD1017635

Entities

People

  • B. Nichols
  • C. Rong
  • H. Hier
  • Mahesh R. Neupane
  • P. Folkes
  • P. Taylor

Organizations

  • United States Army Research Laboratory

Tags

Communities of Interest

  • Advanced Electronics
  • Energy and Power Technologies

DTIC Thesaurus Topics

  • Crystals
  • Diffraction
  • Epitaxial Growth
  • Materials
  • Measurement
  • Molecular Beam Epitaxy
  • Molecular Beams
  • Phase Transformations
  • Raman Scattering
  • Scattering
  • Semiconductors
  • Single Crystals
  • Substrates
  • Three Dimensional
  • Two Dimensional
  • X Rays
  • X-Ray Diffraction

Fields of Study

  • Materials science

Readers

  • Astronomy/Astrophysics
  • Semiconductor Device Technology

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene