Fabrication and Characterization of CNT/Ni/TiN/Si Bridge Structures
Abstract
CNT bridge fabrication results for SOI Batch #3A samples were shown in last report, except for the particularly promising sample TSoi-14N which was planned to be cleaned using a new microwave plasma ashing method prior to CNT growth. Although the MW plasma ashing wasn't successful in removing the remaining burnt/popped photoresist on the sample, aligned CNT were obtained for the first time on this sample's previously broken Bridge #3 (Figure 1). However, Bridges #1 and #2 also collapsed before the CNT growth making CTsoi-14N unsuitable for electrical thermal characterization. Last MW stripping, lithography and CNT growth process parameters are available in the follow-up tables of (Annex 1, Annex 1B), (Annex 1, Annex 1D), and (Annex 1, Annex 1G) respectively for this sample. Photomicrographs and SEM micrographs of the CNT bridge are added for those last fabrication steps in Annex 2.
Document Details
- Document Type
- Technical Report
- Publication Date
- Mar 14, 2014
- Accession Number
- AD1018039
Entities
People
- Andranik Sarkissian
- Jean-baptiste A. Kpetsu