Radiation Effects in III-V Nanowire Devices
Abstract
The top-down fabrication of an in-plane nanowire (NW) GaAs metal-oxide-semiconductor field-effect transistor (MOSFET) by focused-ion beam (FIB) etching and chemical oxidation is reported. The device has a semiconductor-on-insulator structure with an n -GaAs/Al2O3 layer stack implemented by lateral hydrolyzation oxidation. A 2 micron-long channel having an effective cross section ~70 x 220 nm is directly fabricated into the n -GaAs layer by FIB etching. The channel is electronically isolated from the substrate by the Al2O3 layer and is effectively an in-plane NW epitaxially connected to the source and drain for a planar MOSFET within a single layer. The NW channel is surrounded by an ~15 nm-thick gate oxide.
Document Details
- Document Type
- Technical Report
- Publication Date
- Sep 01, 2016
- Accession Number
- AD1018179
Entities
People
- Steven R. Brueck
Organizations
- Defense Threat Reduction Agency