Study of Radiation Hardness of Lattice Matched AlInN/GaN HEMT Heterostructures

Abstract

The objective of this project is to gain fundamental understanding of radiation mechanisms inAlInN/GaN based high electron mobility transistor (HEMT) heterostructures and devices. Gaining such basic knowledge can reduce the risk to the development of emerging GaN based electronics that are resistant to nuclear and space radiation effects. This project is part of the field of wide bandgap high power, high frequency electronics, as well as fundamental materials science of these materials. The technical approach consists of investigating the atom probe tomography (APT) of strain free, lattice matched AlInN/GaN heterostructures and devices after irradiation. APT offers the unique combination of field ion microscopy and time-of-flight spectroscopy to enable the 3D reconstruction map of elements in a structure with theoretically chemical isotope resolution capability and atomic spatial resolution. As such, atom probe tomography is potentially uniquely capable of identifying radiation induced defects in the electronic materials of interest.

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Document Details

Document Type
Technical Report
Publication Date
Oct 01, 2016
Accession Number
AD1019107

Entities

People

  • Patrick Kung

Organizations

  • University of Alabama

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Band Gaps
  • Charge Carriers
  • Compound Semiconductors
  • Electron Microscopy
  • Electron Mobility
  • Energy Bands
  • Failure Mode And Effect Analysis
  • Gamma Rays
  • High Electron Mobility Transistors
  • High Resolution
  • Low Temperature
  • Materials Science
  • Scattering
  • Semiconductors
  • Spectra
  • Spectroscopy
  • Two Dimensional

Fields of Study

  • Materials science
  • Physics

Readers

  • Molecular Photonics/Laser Physics
  • Semiconductor Device Technology
  • Systems Analysis and Design

Technology Areas

  • Microelectronics
  • Space
  • Space - Hall-Effect Thruster