Electron Transport and Minority Carrier Lifetime in HgCdSe (Briefing Charts)

Abstract

Major source of HgCdSe background electron concentration is Group VII impurities (Br, Cl, F) introduced from Se source material. Change in concentration with annealing suggests p-type Hg vacancies and n-type Se vacancies. QMSA suggests an inhomogeneous distribution of electrons introduced in growth, reduced with Hg-then-Se anneal making mobility more discrete. Lower electron concentration allows us to see PCD transients, which suggest trap present in as-grown material that is increased with Hg-annealing but removed with Se-annealing, could be Se vacancies. Lowering background electron concentration and increasing lifetime will require higher purity Se and optimized anneal process.

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Document Details

Document Type
Technical Report
Publication Date
Mar 11, 2014
Accession Number
AD1019659

Entities

People

  • C. H. Swartz
  • J. Pattison
  • Kevin Doyle
  • T. H. Myers
  • Yanran P. Chen

Organizations

  • Texas State University

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  • Abstracts
  • Annealing
  • Electron Mobility
  • Electrons
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Fields of Study

  • Materials science

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  • Materials Science and Engineering.
  • Semiconductor Device Technology

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  • Microelectronics