The Use of Confocal Photoluminescence Microscopy for Determination of Defect Densities in Various 2-6 Semiconductors

Abstract

We are investigating the use of confocal photoluminescence (c-PL) mapping to measure non-radiative defects (in principle equivalent to EPD) in semiconducting materials. These results have been shown to correlate with similar measurements using cathodoluminescence (CL). The primary impetus is to develop an optical technique that can beused in a more production-friendly environment without degrading sample surfaces while producing accurate dislocate densities. The technique of c-PL is a point mapping PL measurement where the microscope is operated in an optical configuration that significantly enhances both lateral and depth resolution and returns crisp PL images with high contrast. This technique revolutionized fluorescent imaging in biology, and has the potential to become an important semiconductor characterization tool.

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Document Details

Document Type
Technical Report
Publication Date
Mar 11, 2014
Accession Number
AD1019661

Entities

People

  • Anna C. Savage
  • C. M. Lennon
  • O. C. Noriega
  • P. S. Wijewarnasuriya
  • Polly J. Smith
  • R. N. Jacobs
  • T. H. Myers
  • Yunhui Chen

Organizations

  • Texas State University

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Argon Lasers
  • Confocal Laser Scanning Microscopy
  • Confocal Microscopy
  • Detection
  • Detectors
  • Dislocations
  • High Resolution
  • Information Operations
  • Lasers
  • Materials
  • Measurement
  • Microscopes
  • Microscopy
  • Military Research
  • Optical Detectors
  • Photoluminescence
  • Semiconductors

Readers

  • Image Processing and Computer Vision.
  • Research Science/Academic Research
  • Semiconductor Device Technology

Technology Areas

  • Microelectronics