Use of Atomic Hydrogen to Prepare GaSb Substrates for Subsequent ZnTe Growth by MBE

Abstract

ZnTe is of current interest for photovoltaic applications and as a possible buffer layer for growth of HgCdTe orHgCdSe. Moreover, the ZnTe/GaSb heterostructure itself is of potential interest for cascade solar cells. Thus, different approaches geared towards optimizing the epitaxial growth of high quality ZnTe/GaSb are under active investigation. Atomic hydrogen was investigated for surface preparation of GaSb for subsequent growth of ZnTe andZnTeSe.

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Document Details

Document Type
Technical Report
Publication Date
Mar 11, 2014
Accession Number
AD1019665

Entities

People

  • T. H. Myers

Organizations

  • Texas State University

Tags

DTIC Thesaurus Topics

  • Abstracts
  • Diffraction
  • Electron Microscopy
  • Engineering
  • Epitaxial Growth
  • Hydrogen
  • Information Operations
  • Materials
  • Materials Science
  • Military Research
  • Solar Cells
  • Substrates
  • Transmission Electron Microscopy
  • Universities
  • X Ray Photoelectron Spectroscopy
  • X Rays
  • X-Ray Diffraction

Fields of Study

  • Materials science

Readers

  • Semiconductor Device Technology