Ultrafast Nonlinear Microscopy in III-V Semiconductor Nanostructures

Abstract

This project involved the investigation of the photoluminescence properties of individual ZnO nano-rods, characterization of charge carrier dynamics at different locations within a single ZnO rod, and strain-induced electron-hole recombination in silicon nanowires, all using femtosecond pump-probe microscopy techniques developed in this laboratory. It was found that charge carrier dynamics are a function of location within a nano-wire (near the end or the middle), and that strain within a silicon nanowire significantly reduces the lifetime of charge carriers, with the results suggesting that development of strain-enabled optoelectronic devices with indirect-bandgap materials should be possible.

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Document Details

Document Type
Technical Report
Publication Date
Jan 20, 2016
Accession Number
AD1020440

Entities

People

  • James K. Parker
  • John M Papanikolas

Organizations

  • University of North Carolina at Chapel Hill

Tags

DTIC Thesaurus Topics

  • Charge Carriers
  • Conduction Bands
  • Crystal Lattice Vibrations
  • Crystal Lattices
  • Dynamics
  • Electron Holes
  • Electron Microscopy
  • Energy Bands
  • Materials Science
  • Microscopy
  • Nanowires
  • Optics
  • Optomechanics
  • Physical Chemistry
  • Scanning Electron Microscopy
  • Spectra
  • Standing Waves

Fields of Study

  • Materials science

Readers

  • Nanoscale Plasmonic Nanotechnology
  • Quantum Dot Semiconductor Device Photonics and Graphene Optoelectronic Materials and THz Physics.
  • Structural Dynamics.

Technology Areas

  • Microelectronics