Self-Catalyzed Growth of Axial GaAs/GaAsSb Nanowires by Molecular Beam Epitaxy for Photodetectors
Abstract
Semiconductor nanowires are currently attracting great interest due to their unique optical and electrical properties with great prospects for potential optoelectronic device applications at nanoscale.
Document Details
- Document Type
- Technical Report
- Publication Date
- Jun 01, 2015
- Accession Number
- AD1020599
Entities
People
- Sai K. Ojha
Organizations
- North Carolina State University