Spin on Dopants for High-Performance Single-Crystal Silicon Transistors on Flexible Plastic Substrates
Abstract
Free-standing micro/nanoelements of single-crystal silicon with integrated doped regions for contacts provide a type of material that can be printed onto low-temperature device substrates, such as plastic, for high-performance mechanically flexible thin-film transistors (TFTs). We present simple approaches for fabricating collections of these elements, which we refer to as microstructured silicon (micro s-Si), and for using spin-on dopants to introduce doped regions in them. Electrical and mechanical measurements of TFTs formed on plastic substrates with this doped micro s-Si indicate excellent performance. These and other characteristics make the material potentially useful for emerging large area, flexible macroelectronic devices.
Document Details
- Document Type
- Technical Report
- Publication Date
- Mar 23, 2005
- Accession Number
- AD1020659
Entities
People
- E. Menard
- J. A. Rogers
- K. Hurley
- R. G. Nuzzo
- Z.-t. Zhu
Organizations
- University of Illinois Urbana–Champaign