Temperature-Dependent Electrical Conductivity of GeTe-Based RF Switches
Abstract
The DC and RF electrical behavior of GeTe-based RF switches was characterized in both ON and OFF states at temperatures ranging from 25 K to 375 K. ON-state current-voltage characteristics vary only weakly with temperature, exhibiting Ohmic behavior at all temperatures across the full voltage range measured. OFF-state current varies linearly with voltage at all measured fields for low temperatures, but transitions to super-linear behavior at higher fields and temperatures. Unlike the ON-state case, the low-field OFF-state DC conductance exhibits considerable temperature dependence, decreasing four orders of magnitude as the temperature is decreased from 375 K to 200 K, resulting in dramatically increased OFF/ON resistance ratios at low temperatures. RF performance, evaluated through small signal S-parameter measurements, exhibits minimal temperature variation in either the ON or OFF states.
Document Details
- Document Type
- Technical Report
- Publication Date
- Mar 31, 2015
- Accession Number
- AD1022837
Entities
People
- Evan B. Jones
- Harvey S. Newman
- James G. Champlain
- Laura B Ruppalt
- Nabil El-Hinnawy
- Pavel Borodulin
- Robert M. Young
Organizations
- United States Naval Research Laboratory