Novel Si-Ge-C Superlattices for "More than Moore" CMOS

Abstract

The search for Silicon-based direct band-gap semiconductors is more relevant than ever for More than Moore CMOS. Monolithically-integrated novel crystalline materials are key to enabling increased performance and new functionalities, such as efficient light absorption and emission. Si-Ge-C SuperLattices [1] are highly ordered synthetic crystals having direct band-gaps and large oscillator strengths. This paper will present ongoing research in simulation and epitaxial growth.

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Document Details

Document Type
Technical Report
Publication Date
Mar 31, 2016
Accession Number
AD1025279

Entities

People

  • Carlos J. Augusto
  • Lynn Forester
  • Pedro C. Diniz

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Absorption
  • Band Gaps
  • Band Structures
  • Bipolar Junction Transistors
  • Compound Semiconductors
  • Conduction Bands
  • Energy Bands
  • Engineering
  • Epitaxial Growth
  • Fabrication
  • Heterojunction Bipolar Transistors
  • Long Wavelengths
  • Materials
  • Modules (Electronics)
  • Orientation (Direction)
  • Regions
  • Semiconductors

Readers

  • Quantum Dot Semiconductor Device Photonics and Graphene Optoelectronic Materials and THz Physics.
  • Technical Research and Report Writing.

Technology Areas

  • Microelectronics