GaN on Diamond with Ultra-Low Thermal Barrier Resistance

Abstract

We investigated the effective thermal boundary resistance (TBReff) of GaN-on-Diamond interfaces for diamond growth with a ~ 5nm SiNx, a ~ 5nm AlN interfacial layer, or without any interfacial layers, respectively. It was found that the SiNx interfacial layers resulted in smooth and sharp interfaces, but direct growth of diamond on GaN exhibited very rough interfaces. TBR(eff) is strongly correlated with interface quality. With an approximately 5nm SiNx interfacial layer, aTBR(eff) as low as 2.5 m2k/GW was achieved, which is more than five times better than the previously reported best data, and close to the limit predicted by theoretical models for GaN-diamond interfaces.

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Document Details

Document Type
Technical Report
Publication Date
Mar 31, 2016
Accession Number
AD1025282

Entities

People

  • Cathy Lee
  • Edward Beam
  • Jinqiao Xie
  • Julian Anaya
  • Martin Kuball
  • Michael Becker
  • T.A. Grotjohn
  • Xing Gu

Tags

Communities of Interest

  • Advanced Electronics
  • Energy and Power Technologies

DTIC Thesaurus Topics

  • Boundaries
  • Conductivity
  • Diamond Films
  • Dielectrics
  • Films
  • Frequency Bands
  • Grain Size
  • High Density
  • High Temperature
  • Materials
  • Materials Science
  • Nucleation
  • Resistance
  • Scattering
  • Thermal Conductivity
  • Thermal Resistance
  • Thick Films

Readers

  • Fluid Dynamics.
  • Nanofabrication and Microfabrication.
  • Semiconductor Device Technology