Simulations of Proton Implantation in Silicon Carbide (SiC)
Abstract
We report on exploratory research effort with preliminary results on investigating fundamental radiation effects in micromachined silicon carbide (SiC) structures and devices. In this technical digest, we briefly present a computer simulation study on the effects of implanting protons (hydrogen ions, H+) into SiC thin layers on silicon(Si) substrate, and explore the ion implantation conditions that are relevant to experimental radiation of SiC layers.
Document Details
- Document Type
- Technical Report
- Publication Date
- Mar 31, 2016
- Accession Number
- AD1025395
Entities
People
- Hailong Chen
- Jonathan P. McCandless
- Philip X-L Feng
Organizations
- Case Western Reserve University