Nonlinear Elasticity of Doped Semiconductors

Abstract

In this report Michigan State University (MSU) provides the results of studying the temperature dependence of thefrequency shift and the amplitude dependence of the vibration frequency for <100> length extension modes in n-dopedsilicon (Si) microelectromechanical (MEMS) resonators. MSU also has started a comparison with the experimental datafrom the Stanford University group. The obtained results show that the goal of the project has been reached. MSU hasfull quantitative theory of the temperature- and density-dependent change of the vibration frequency of eigenmodes inresonators and of their dependence on the vibration amplitude.

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Document Details

Document Type
Technical Report
Publication Date
Feb 01, 2017
Accession Number
AD1026641

Entities

People

  • Kirill Moskovtsev
  • Mark Dykman

Organizations

  • Michigan State University

Tags

Communities of Interest

  • Advanced Electronics
  • Energy and Power Technologies

DTIC Thesaurus Topics

  • Air Force
  • Air Force Research Laboratories
  • Conduction Bands
  • Crystal Lattices
  • Elastic Properties
  • Electron Density
  • Electron Energy
  • Electrons
  • Energy Bands
  • Experimental Data
  • Frequency
  • Frequency Shift
  • Microelectromechanical Systems
  • Semiconductors
  • Standing Waves
  • United States
  • Waves

Fields of Study

  • Physics

Readers

  • Data Mining and Knowledge Discovery.
  • Quantum spin resonance or Electron Paramagnetic Resonance spectroscopy.
  • Structural Dynamics.

Technology Areas

  • Microelectronics
  • Microelectronics - Microelectromechanical Systems