Atomic- and Device-Scale Physics of Ion-Transport Memristors
Abstract
This effort has been de-emphasized during the last year after the AFOSR program manager indicated they were interested in redirecting research toward wide- and ultra-wide-band gap semiconductor research. Our redirection has led to successful AFOSR proposal on defects in GaN and AIN. We also made some progress on the theory of metal motion and incorporation in Ge2Se3, the activation energy for silver and copper motion in crystalline SiO2, and the electronic structure of copper in Ge2Se3. Finally, our graduate student has finished writing his MS thesis on oxygen in Ge2Se3.
Document Details
- Document Type
- Technical Report
- Publication Date
- Feb 02, 2017
- Accession Number
- AD1027289
Entities
People
- Arthur H. Edwards
Organizations
- Air Force Research Laboratory