Analysis and Control of Carrier Transport in Unipolar Barrier Mid-Infrared (IR) Detectors

Abstract

Molecular Beam Epitaxy (MBE) growth quality is shown to have significant effects on the carrier transport, e.g., dark current of unipolar barrier infrared detectors constructed of InAs-based materials. MBE growth temperature affects the quality of InAs materials, as assessed by measured defects concentration, surface roughness, and photoluminescence. InAs material quality correlated with dark current of InAsnBn detectors.

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Document Details

Document Type
Technical Report
Publication Date
Jan 03, 2017
Accession Number
AD1028849

Entities

People

  • Gary W. Wicks

Organizations

  • University of Rochester

Tags

Communities of Interest

  • Advanced Electronics
  • Space

DTIC Thesaurus Topics

  • Air Force
  • Air Force Research Laboratories
  • Current Density
  • Detectors
  • Epitaxial Growth
  • Governments
  • Infrared Detectors
  • Materials
  • Molecular Beam Epitaxy
  • Molecular Beams
  • Photoluminescence
  • Roughness
  • Spacecraft
  • Steady State
  • Surface Roughness
  • Transport Ships
  • Vehicles

Fields of Study

  • Materials science

Readers

  • Semiconductor Device Technology