Atomistic- and Meso-Scale Computational Simulations for Developing Multi-Timescale Theory for Radiation Degradation in Electronic and Optoelectronic Devices

Abstract

This project will support a research effort at the University of Michigan to simulate atomistic- and meso-scale behavior of defect evolutions in compound semiconductors, including ultrafast displacement cascade, intermediate defect stabilization and cluster formation, as well as slow defect reaction and migration. The fundamental mechanisms and knowledge gained from atomic- and meso-scale simulations will be input into rate-diffusion theory as initial conditions to calculate the steady-state distribution of point defects in a mesoscopic layered structured system, thus allowing the development of a multi-timescale theory to study radiation degradation in electronic and optoelectronic devices.

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Document Details

Document Type
Technical Report
Publication Date
Feb 13, 2017
Accession Number
AD1030636

Entities

People

  • Fei Gao

Organizations

  • University of Michigan

Tags

Communities of Interest

  • Energy and Power Technologies

DTIC Thesaurus Topics

  • Air Force Research Laboratories
  • Compound Semiconductors
  • Crystal Lattices
  • Crystal Structure
  • Diffusion Theory
  • Electrons
  • Field Effect Transistors
  • First Principles Calculations
  • Molecular Dynamics
  • Optoelectronic Devices
  • Point Defects
  • Radiation
  • Semiconductor Devices
  • Semiconductors
  • Silicon Carbide
  • Simulations
  • Spacecraft

Fields of Study

  • Physics

Readers

  • Computational Fluid Dynamics (CFD)
  • Quantum Dot Semiconductor Device Photonics and Graphene Optoelectronic Materials and THz Physics.

Technology Areas

  • Microelectronics