Effects of Growth Conditions on the Measured Electrical Properties of Monolayer Molybdenum Disulfide
Abstract
Molybdenum disulfide (MoS2) is a 2-D material that shows promise for flexible electronics, low-power applications, and optoelectronics due to its atomic thickness, high strain limit, large Ion/Ioff, and direct bandgap. We report on the electrical characterization of MoS2 transistors fabricated from US Army Research Laboratory-grown MoS2 and focus on how the MoS2 growth conditions affect the electrical performance. Metrics such as electron mobility, threshold voltage, hysteresis, and contact resistance are calculated for multiple devices on each growth condition. Measured devices had an electron mobility in the range of 115 cm2/Vs. MoS2 grown with lower sulfur precursor purity had the lowest mobility and a negatively shifted threshold voltage. A longer MoS2 growth time led to devices with the highest measured mobility. Transferring the MoS2 to a new substrate and modifying the growth setup to a 2-boat process show potential for improving device performance and prompt further investigation.
Document Details
- Document Type
- Technical Report
- Publication Date
- Feb 01, 2017
- Accession Number
- AD1031473
Entities
People
- Alexander L. Mazzoni
- Matthew J Hwee
- Matthew L. Chin
- Robert A. Burke
Organizations
- United States Army Research Laboratory