Graphene on SiC as Outstanding Functional and Structural Nanomaterial with Applications from the Nano- to the Macroscale - 154032from the Nano to the Macroscale 154032

Abstract

This research project uses a novel approach to the synthesis of high-quality and highly uniform few-layer graphene on silicon wafers that is based on solid source growth from hetero-epitaxial SiC films and represents a promising avenue for a graphene technology on silicon. The current funding period involved further analysis and refinement of the comprehension of synthesis mechanisms and graphene physical, chemical, electrochemical, electrical, electronic and mechanical properties. A critical issue was identified in the SiC/silicon system that affects previous electrical and electronic evaluations of graphene. It was determined that SiC/silicon interface breaks down under high temperature anneal and/or high temperature growth, and thus leads to an effective shorting with the silicon substrate. This is a crucial understanding as it allows revision of the fundamental understanding of the p-type conduction of graphene, which is going to be a crucial issue for any research group attempting to grow graphene or III-V materials (GaN) on SiC/silicon. The research suggests that using a more robust barrier between SiC and SiC, as recently shown by Japanese researchers, provides a workable solution. This finding applies to any attempt to use SiC/silicon for harsh environment devices. Further insight into synthesis mechanisms of the catalytic alloy-mediated graphene on SiC/silicon established that oxygen plays a key role, and that this method leads to the prevalent formation of a monolayer graphene on a buffer carbon layer, which is an important factor in exceptionally high adhesion of this graphene to the substrate. It was demonstrated that graphene on SiC/silicon is a path towards high performing integrated supercapacitors, which obtained energy densities higher than state-of-the-art thin-film Li-ion batteries, and thus find application in miniaturized supercapacitors.

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Document Details

Document Type
Technical Report
Publication Date
Aug 04, 2016
Accession Number
AD1033041

Entities

People

  • Francesca Iacopi

Organizations

  • Griffith University

Tags

DTIC Thesaurus Topics

  • Air Force Research Laboratories
  • Ceramic Materials
  • Compound Semiconductors
  • Electron Microscopy
  • Electronics
  • Energy
  • Energy Storage
  • Fabrication
  • Films
  • Graphene
  • High Temperature
  • Materials
  • Materials Laboratories
  • Materials Processing
  • Materials Testing
  • Measurement
  • Mechanical Properties
  • Nanomaterials
  • Paper
  • Plasmonic Metamaterials
  • Silicon Carbide
  • Stresses
  • Thin Films
  • Two-Dimensional Materials
  • Wearable Computers

Fields of Study

  • Materials science

Readers

  • Quantum Dot Semiconductor Device Photonics and Graphene Optoelectronic Materials and THz Physics.
  • Semiconductor Device Technology
  • Systems Analysis and Design

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene