Radiation Hard and Self Healing Substrate Agnostic Nanocrystalline ZnO Thin Film Electronics

Abstract

Radiation exposure effects for ZnO thin film transistors (TFTs) with active layers deposited by plasma enhanced atomic layer deposition and pulsed laser deposition are studied for gamma ray doses up to 100 Mrad. Radiation exposure related TFT changes, either with or without electrical bias during irradiation, are primarily a negative threshold voltage shift and a smaller threshold voltage shift. Field effect mobility remains nearly unchanged. Radiation induced changes are nearly completely removed by annealing at 200 C for 1 minute and some recovery is seen even at room temperature. To the best of our knowledge, these are the most radiation-hard thin film transistors reported to date.

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Document Details

Document Type
Technical Report
Publication Date
Apr 14, 2017
Accession Number
AD1033048

Entities

People

  • T. L. Jackson

Organizations

  • Pennsylvania State University

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Air Force Research Laboratories
  • Band Gaps
  • Band Structures
  • Chemical Vapor Deposition
  • Conduction Bands
  • Crystals
  • Energy Bands
  • Energy Levels
  • Gamma Rays
  • Ionizing Radiation
  • Materials
  • Radiation Effects
  • Semiconductor Devices
  • Semiconductors
  • Thin Film Transistors
  • Thin Films
  • Three Dimensional

Fields of Study

  • Physics

Readers

  • Nanoscale Plasmonic Nanotechnology
  • Pulsed Power and Plasma Physics.
  • Semiconductor Device Technology

Technology Areas

  • Directed Energy
  • Directed Energy - Pulsed-Laser Deposition
  • Microelectronics
  • Microelectronics - Graphene