Investigation of Basic Mechanisms of Radiation Effects in Carbon-Based Electronic Materials
Abstract
This project applied experiments theoretical calculations to characterize the radiation response of carbon materials (graphene and carbon nanotubes) relevant to emerging technologies. Radiation testing included 10 keV X-rays, 4 MeV protons, heavy ions, and UV light. Structures included graphene on silicon dioxide, graphene on silicon nitride, graphene on boron nitride, suspended graphene, carbon nanotubes on silicon dioxide, and 2D molybdenum disulfide. Embodiments included simple layered structures, carbon nanotube diodes, FET, and PZT-memory test device structures. Characterization included RBS, TEM, and electrical measurements. DFT and KMC calculations were applied to understand the observed effects. Findings advanced the state of understanding on radiation effects in these materials, and indicated that the very small volumes associated with the 2D materials result in minimal direct interaction; process integration and surrounding materials dominate the nominal electrical performance and radiation response.
Document Details
- Document Type
- Technical Report
- Publication Date
- Jun 01, 2017
- Accession Number
- AD1035320
Entities
People
- J. L. Davidson
- Ji U. Lee
- Michael L. Alles
- S. Pantelides
Organizations
- Vanderbilt University