Study of Minority Carrier Lifetimes in Very Long Wave Infrared Strained Layer InAs/GaInSb Superlattices (Postprint)
Abstract
Significantly improved carrier lifetimes in very long wavelength infrared (VLWIR) InAs/GaInSb superlattice (SL) absorbers are demonstrated by using time-resolved microwave reflectance (TMR) measurements. A nominal 47.0 InAs/21.5 Ga0.75In0.25Sb SL structure that produces an approximately 25 m response at 10 K has a minority carrier lifetime of 140 20 ns at 18 K, which is an order-of-magnitude improvement compare to previously reported lifetime values for other VLWIR detector absorbers. This improvement is attributed to the strain-engineered ternary SL design, which offers a variety of epitaxial advantages and ultimately leads to the improvements in the minority carrier lifetime b mitigating defect-mediated Shockley-Read-Hall (SRH) recombination centers. By analyzing the temperature dependence of TMR decay data, the recombination mechanisms and trap states that currently limit the performance of this SL absorber are identified. The results show a general decrease in the long-decay lifetime component, which is dominated by SRH recombination at temperatures below ~30 K, and by Auger recombination at temperatures above ~45 K.
Document Details
- Document Type
- Technical Report
- Publication Date
- Sep 19, 2016
- Accession Number
- AD1036054
Entities
People
- B. V. Olson
- E. A. Kadlec
- E. A. Shaner
- Gail J. Brown
- H. J. Haugan
- J. K. Kim
Organizations
- Sandia National Laboratories