GeSn/Si Avalanche Photodetectors on Si substrates
Abstract
In this project, firstly, the material growth of GeSn by chemical vapor deposition (CVD) system has been investigated. The material growth mechanism was in-depth studied; secondly, the material and optical characterizations have been conducted, including SEM, TEM, XRD, Raman, PL and ellipsometry spectroscopy. The results indicated that the device level material quality was achieved; thirdly, the GeSn samples were fabricated into LEDs and photo detectors, whose operating wavelength coverd from 1700 to 2600 nm. Particularly, the responsivity of GeSn photoconductor was higher than that of III-V photo detector, and the D* of GeSn photodiode was only one order of magnitude lower than that of extend-InGaAs detector, indicating the promising future applications of these type of photodetectors. Based on the characterization results, the GeSn photo detector as a potential candidate for low-cost uncooled multi-color infrared focal-plane-array was proposed. (FPA) application
Document Details
- Document Type
- Technical Report
- Publication Date
- Sep 16, 2016
- Accession Number
- AD1037717
Entities
People
- Hameed Naseem
- Shui-Qing Yu
Organizations
- University of Arkansas