Direct Bandgap Group IV Materials

Abstract

Direct bandgap group IV materials have been long sought for in both academia and industry for the implementation of photonic devices. This proposal works on the fundamental issues and planar photonic devices that are suitable for the integration with the group IV based electronic devices. In this project, we have accomplished (a) direct bandgap group IV materials of GeSn, (b) GeSn-based planar light emitting diode operated at near infrared with direct emission, and (c) the first planar photodetector (Appl. Phys. Lett. 105, 231109 (2014)and references within) This move a step forward toward the monolithic integration of optic and electronic devices in a single chip (all group IV materials). Still, there are two other components (waveguide channel and modulator) that is needed for the all group IV materials optoelectronic and this will be the main targets for next project.

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Document Details

Document Type
Technical Report
Publication Date
Jan 21, 2016
Accession Number
AD1037844

Entities

People

  • Hung H. Cheng

Organizations

  • National Taiwan University

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Air Force
  • Air Force Research Laboratories
  • Conduction Bands
  • Detectors
  • Diodes
  • Electron Diffraction
  • Electronics
  • Emission
  • Energy Bands
  • Films
  • Ion Implantation
  • Light Emitting Diodes
  • Materials
  • Photonic Devices
  • Semiconductors
  • Subatomic Particles
  • Thin Films

Fields of Study

  • Materials science

Readers

  • Business Analytics
  • Integrated Circuit Design and Technology.
  • Quantum Dot Semiconductor Device Photonics and Graphene Optoelectronic Materials and THz Physics.

Technology Areas

  • Microelectronics