Broadband 0.25-um Gallium Nitride (GaN) Power Amplifier Designs

Abstract

The US Army Research Laboratory is exploring devices and circuits for RF communications, networking, and sensor systems of interest to Department of Defense applications, particularly for next-generation radar systems. Broadband, efficient, high-power monolithic microwave integrated circuit amplifiers are extremely important in any communication system that must operate reliably and efficiently in continually crowded spectrums, with multiple purposes for communications, networking, and radar. This report describes the design of a broadband class A/B power amplifier using Qorvos 0.25-m high-power efficient gallium nitride on a 4-mil silicon carbide process. This design was one of several submitted to a US Air Force Research Laboratory sponsored wafer fabrication.

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Document Details

Document Type
Technical Report
Publication Date
Aug 14, 2017
Accession Number
AD1038718

Entities

People

  • John E. Penn

Organizations

  • United States Army Research Laboratory

Tags

Communities of Interest

  • Energy and Power Technologies

DTIC Thesaurus Topics

  • Air Force
  • Air Force Research Laboratories
  • Amplifiers
  • Bandwidth
  • Broadband
  • Circuits
  • Compound Semiconductors
  • Fabrication
  • Frequency
  • Gallium Nitrides
  • Integrated Circuits
  • Microwave Integrated Circuits
  • Military Research
  • Monolithic Microwave Integrated Circuits
  • Power Amplifiers
  • Radar
  • Three Dimensional

Readers

  • Integrated Circuit Design and Technology.
  • Tactical Satellite Communications Systems Engineering.

Technology Areas

  • Microelectronics