MEASUREMENT OF PHONON TRANSPORT IN GaN-ON-SiC AND GaN-ON-DIAMOND HIGH ELECTRON MOBILITY TRANSISTOR (HEMT) DEVICES

Abstract

The objective of this project is to experimentally study the transient non-diffusive phonon transport in gallium nitride (GaN) based high electron mobility transistor (HEMT) devices. Using the ultrafast pump-probe thermoreflectance, we found that the measured thermal conductivity of the GaN substrate depends on the heating frequency and the metal thin film thickness. This novel phenomenon observed suggest that phonon transport in GaN would depend on both the structural and operating frequency.

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Document Details

Document Type
Technical Report
Publication Date
Oct 16, 2017
Accession Number
AD1040278

Entities

People

  • Ronggui Yang

Organizations

  • University of Colorado Boulder

Tags

Communities of Interest

  • Advanced Electronics
  • Air Platforms
  • Energy and Power Technologies
  • Sensors

DTIC Thesaurus Topics

  • Air Force
  • Air Force Research Laboratories
  • Boltzmann Equation
  • Compound Semiconductors
  • Electron Mobility
  • Electrons
  • Films
  • Frequency
  • High Electron Mobility Transistors
  • Materials
  • Metals
  • Silicon Carbide
  • Specific Heat
  • Temperature Gradients
  • Thermal Conductivity
  • Thin Films
  • Transport Properties

Fields of Study

  • Materials science

Readers

  • Nanoscale Plasmonic Nanotechnology
  • Semiconductor Device Technology
  • Thermal Physics or Thermal Science.

Technology Areas

  • Microelectronics