Greens Function-Based Defect Identification in InAs-InA1-xSbx Strained Layer Superlattices (Postprint)
Abstract
We have extended the recently developed approach that employs first-principles Hamiltonian, tight-binding Hamiltonian, and Greens function methods to study native point defect states in InAs/InAs0.7Sb0.3 strained layer superlattices (SLS) latticed matched to GaSb. Our calculations predict a defect level at 250 meV below the GaSb valance band edge, in agreement with values deduced recently from lifetime measurements and analysis [Aytac et al. Phys. Rev. Appl., 5, 054016 (2016)]. In addition, we identify the defect level to be arising from an In-vacancy in the InAsSb region of the superlattice. The formation energy calculations further indicate that In-vacancies are easier to form in both regions of the superlattice than in bulk InAs or in InAsSb alloy. Our results suggest that In-vacancy is the most damaging native defect that limits lifetimes InAs/ InAs/InAs0.7Sb0.3
Document Details
- Document Type
- Technical Report
- Publication Date
- Jun 15, 2017
- Accession Number
- AD1040281
Entities
People
- Siddhartha Krishnamurthy
- Zhi G. Yu
Organizations
- SRI International