Design of Alpha Voltaic Power Source Using Americium 241 (241Am) and Diamond with a Power Density of 10 mW/cm3
Abstract
Long-lived isotope power sources can provide remotely located sensors and communications nodes with decades of power. Beta-voltaic power sources have been developed for the nanowatt and microwatt power levels. The use of alpha emitters (alphavoltaics) would increase the energy output by a factor of 100 using the same size, weight, and packaging. Wide band-gap radiation-tolerant semiconductors (diamond, gallium nitride, and silicon carbide) are evaluated in order to convert the 5-MeV alpha decays into electrical current. Alpha energy deposition in diamond and gallium nitride (GaN) was calculated and compared. Alpha-voltaic energy converters were designed in diamond and GaN based on the energy deposition calculations. Diamond p /p structures of 9-m thickness each would place the depletion region at the maximum energy deposition location. The device structures are described.
Document Details
- Document Type
- Technical Report
- Publication Date
- Oct 19, 2017
- Accession Number
- AD1040902
Entities
People
- John Langley
- Johnny Russo
- Marc S. Litz
- William Jr Ray
Organizations
- United States Army Research Laboratory