Recent Progress of B-Ga2O3 MOSFETs for Power Electronic Applications

Abstract

We review AFRLs major device results in the fabrication of -Ga2O3 MOSFETs over the past 2 years. This includes: (1) AFRLs standard fabrication process, (2)improvement of current density, (3) improvement of contact resistance, (4) review of the critical field measurement and(5) review of enhancement mode operation of a -Ga2O3finFET.

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Document Details

Document Type
Technical Report
Publication Date
Mar 20, 2017
Accession Number
AD1041825

Entities

People

  • Andrew J. Green
  • Antonio Crespo
  • Dennis E. Walker
  • Eric J. Heller
  • Gregg H. Jessen
  • Jonathan P. McCandless
  • Kelson D. Chabak
  • Kevin D. Leedy
  • Neil A. Moser
  • Robert C. Fitch
  • Stephen E. Tetlak

Organizations

  • Air Force Research Laboratory

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Air Force
  • Air Force Research Laboratories
  • Band Gaps
  • Chemical Vapor Deposition
  • Crystal Growth
  • Crystals
  • Current Density
  • Electric Fields
  • Electronics
  • Epitaxial Growth
  • Fabrication
  • Manufacturing
  • Materials
  • Molecular Beam Epitaxy
  • Power Electronics
  • Semiconductors
  • United States

Fields of Study

  • Materials science

Readers

  • Electrical Engineering
  • Government Contracting/Procurement.
  • Naval Engineering and Maritime Security

Technology Areas

  • Microelectronics