Options for Hardening FinFETS with Flowable Oxide Between Fins

Abstract

A methodology using radiation-induced charge measurements by CV techniques on blanket oxides is shown to aid in the choice of process options for hardening FinFETs. Net positive charge in flowable oxides was reduced by 50% using a simple non-intrusive process change. This process translates into a 10x reduction in radiation induced offstate current for nFinFETs.

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Document Details

Document Type
Technical Report
Publication Date
Mar 01, 2017
Accession Number
AD1041973

Entities

People

  • Bruce Doris
  • Dennis R. Ball
  • En Xia Zhang
  • Harold Hughes
  • Ji-ung Lee
  • Michael Alles
  • Patrick Mcmarr
  • Richard Southwick

Organizations

  • United States Naval Research Laboratory

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Aspect Ratio
  • Buildings And Structures
  • Electromagnetic Radiation
  • Fabrication
  • Hardening
  • Hardness
  • Heat Treatment
  • Measurement
  • Military Research
  • Oxide Films
  • Oxides
  • Radiation
  • Radiation Hardening
  • X Rays

Readers

  • Integrated Circuit Design and Technology.
  • Nanofabrication and Microfabrication.
  • Plasma Physics.