Relating Silicon Carbide Avalanche Breakdown Diode Design to Pulsed-Energy Capability

Abstract

Silicon carbide avalanche breakdown diodes (ABDs) were fabricated with different P+ implant depths, drift layer thicknesses, and doping concentrations. ABDs from 4 different designs, having breakdown voltages near 1 kV, were pulse tested in an inductive load circuit at peak powers of over 110 kW. Total pulsed-energy dissipation was kept nearly the same among the ABDs for a defined pulse subinterval. Results of the pulsed-current tests are presented and conclusions are drawn from comparisons of the ABD clamping voltages about which design provides the highest pulsed-energy capability.

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Document Details

Document Type
Technical Report
Publication Date
Mar 01, 2017
Accession Number
AD1042234

Entities

People

  • D. C. Capell
  • Damian Urciuoli
  • Miguel Hinojosa
  • Ronald Green
  • Sei-hyung Ryu

Organizations

  • United States Army Research Laboratory

Tags

Communities of Interest

  • Energy and Power Technologies

DTIC Thesaurus Topics

  • Avalanche Diodes
  • Carbides
  • Ceramic Materials
  • Compound Semiconductors
  • Diodes
  • Dissipation
  • Peak Power
  • Peak Values
  • Power Levels
  • Resistance
  • Silicon
  • Silicon Carbide
  • Temperature Coefficients
  • Temperature Gradients
  • Test And Evaluation
  • Thickness
  • Waveforms

Fields of Study

  • Physics

Readers

  • Computational Modeling and Simulation
  • Electrical Engineering
  • Semiconductor Device Technology